Generation of THz radiation by excitation of InAs with a femtosecond free-electron laser

被引：0
|
作者：
Tani, M [1 ]
Kono, S [1 ]
Gu, P [1 ]
Sakai, K [1 ]
Usami, M [1 ]
Shinn, M [1 ]
Gubeli, JF [1 ]
Neil, G [1 ]
Xu, JZ [1 ]
Kersting, R [1 ]
Zhang, XC [1 ]
机构：
[1] CRL, Kansai Adv Res Ctr, Kobe, Hyogo 6512401, Japan
来源：
ULTRAFAST ELECTRONICS AND OPTOELECTRONICS, PROCEEDINGS | 2001年 / 49卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Terahertz (THz) radiation is generated by exciting an un-doped InAs wafer with a femtosecond free-electron laser (FEL) at the Thomas Jefferson National Accelerator Facility. A microwatt level of THz radiation is detected from the unbiased InAs emitter when it is excited with the femtosecond FEL pulses operated at a wavelength of 1.06 mum and 10 W average power.
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页码：166 / 170
页数：5
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