Generation of THz radiation by excitation of InAs with a femtosecond free-electron laser

被引：0

作者：

Tani, M ^{[1
]}

Kono, S ^{[1
]}

Gu, P ^{[1
]}

Sakai, K ^{[1
]}

Usami, M ^{[1
]}

Shinn, M ^{[1
]}

Gubeli, JF ^{[1
]}

Neil, G ^{[1
]}

Xu, JZ ^{[1
]}

Kersting, R ^{[1
]}

Zhang, XC ^{[1
]}

机构：

[1] CRL, Kansai Adv Res Ctr, Kobe, Hyogo 6512401, Japan

来源：

ULTRAFAST ELECTRONICS AND OPTOELECTRONICS, PROCEEDINGS | 2001年 / 49卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz (THz) radiation is generated by exciting an un-doped InAs wafer with a femtosecond free-electron laser (FEL) at the Thomas Jefferson National Accelerator Facility. A microwatt level of THz radiation is detected from the unbiased InAs emitter when it is excited with the femtosecond FEL pulses operated at a wavelength of 1.06 mum and 10 W average power.

引用

页码：166 / 170

页数：5

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