The composition pulling effect in InGaN growth on the GaN and AlGaN epitaxial layers grown by MOVPE

被引：0
|
作者：
Kawaguchi, Y
Shimizu, M
Hiramatsu, K
Sawaki, N
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来源：
III-V NITRIDES | 1997年 / 449卷
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T [工业技术];
学科分类号：
08 ;
摘要：
InGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and ''the composition pulling effect'' at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.
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页码：89 / 94
页数：6
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