Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

被引：36
|
作者：
Pennington, G. [1 ]
Goldsman, N.
Akturk, A.
Wickenden, A. E.
机构：
[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期
关键词：
D O I：
10.1063/1.2437127
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Theoretical calculations of carrier transport in semiconducting single-walled carbon nanotubes are compared with recent experiments. Considering carrier-phonon scattering, a deformation potential coupling constant of 14 eV is determined. Theory predicts the low-field mobility, conductance, and on resistance of field-effect transistors as a function of nanotube diameter and temperature. When the device is in the on state, the mean free path (Lm-on) varies linearly with tube diameter and inversely with temperature. Intersubband scattering is found to strongly decrease Lm-on when a few subbands are occupied. (c) 2007 American Institute of Physics.
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页数：3
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