Driving force of oxygen-ion migration across high-k/SiO2 interface

被引：8

作者：

Kunugi, Ryota ^{[1
]}

Nakagawa, Nobuhiro ^{[1
]}

Watanabe, Takanobu ^{[1
]}

机构：

[1] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 03期

关键词：

BORN REPULSIVE PARAMETERS; BAND VOLTAGE SHIFT; V-FB SHIFT; ALKALI HALIDES; GATE STACKS; X-RAY; DIPOLE; ORIGIN; SIZES;

D O I：

10.7567/APEX.10.031501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We clarified the mechanism of oxygen (O-)-ion migration at a high-k/SiO2 interface, which is a possible origin of the flat-band voltage shift in metal/high-k gate stacks. The oxygen density difference accommodation model was reproduced by a molecular dynamics simulation of an Al2O3/SiO2 structure, in which O- ions migrate from the higher oxygen density side to the lower one. We determined that the driving force of the O--ion migration is the short-range repulsion between ionic cores. The repulsive force is greater in materials with a higher oxygen density, pushing O- ions to the lower oxygen density side. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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