New gas chemistries for high-performance and chargeless dielectric etching

被引:18
|
作者
Samukawa, S
Mukai, T
Noguchi, K
机构
[1] NEC Corp Ltd, Si Syst Res Labs, LSI Basic Res Lab, Tsukuba, Ibaraki 3058501, Japan
[2] NEC Corp Ltd, ULSI Device Dev Res Labs, Sagamihara, Kanagawa 2291198, Japan
关键词
D O I
10.1016/S1369-8001(99)00017-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:203 / 208
页数:6
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