The study of damage produced by H-ion and He-ion implantation in Lithium tantalate crystal

被引：1

作者：

Pang, L. L. ^{[1
]}

Wang, Z. G. ^{[1
]}

Yao, C. F. ^{[1
]}

Sun, J. R. ^{[1
]}

Cui, M. H. ^{[1
]}

Wei, K. F. ^{[1
]}

Shen, T. L. ^{[1
]}

Sheng, Y. B. ^{[1
]}

Zhu, Y. B. ^{[1
]}

Li, Y. F. ^{[1
]}

Chang, H. L. ^{[1
]}

Wang, J. ^{[1
]}

Zhu, H. P. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

来源：

XXVIII INTERNATIONAL CONFERENCE ON PHOTONIC, ELECTRONIC AND ATOMIC COLLISIONS (ICPEAC) | 2014年 / 488卷

关键词：

D O I：

10.1088/1742-6596/488/13/132028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LiTaO3 single crystals were implanted by 100keV H-ion or He-ion. The results indicate that H-ion implantation creates a lower damage level than the I He-ion implantation does, but the yield of oxygen vacancy produced by H-ion implantation is far higher than by He-ion implantation.

引用

页数：1

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