The effect of moisture on the fracture energy of TiN/SiO2 interfaces in multi-layer thin films

被引：20
|
作者：
Xu, G [1 ]
He, MY [1 ]
Clarke, DR [1 ]
机构：
[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
来源：
ACTA MATERIALIA | 1999年 / 47卷 / 15-16期
基金：
美国国家科学基金会;
关键词：
fracture toughness; stress corrosion; interface diffusion; secondary ion mass spectroscopy (SIMS);
D O I：
10.1016/S1359-6454(99)00272-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fracture energy of TiN/SiO2 interfaces, prepared as part of multi-layer structures by conventional thin-film device processing, has been measured using a residually stressed, micro-strip decohesion test. Both the decohesion energy and the decohesion velocity, at fixed strain energy release rate, are found to be affected by the presence of moisture and are functions of relative humidity. A threshold strain energy release rate for interface decohesion in the presence of moisture is determined. Also, the diffusivity of moisture along the TiN/SiO2 interface, at room temperature, is determined to be (6 +/- 2) x 10(-13) cm(2)/s from sequential images of the D-2 concentration profiles formed by dynamic secondary ion mass spectroscopy (SIMS). Evidence is presented indicating that the TiN/SiO2 interface is weakened by in-diffusion of moisture ahead of the advancing decohesion front. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All lights reserved.
引用
收藏
页码：4131 / 4141
页数：11
相关论文
共 50 条
  • [21] Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
    Satta, A
    Schuhmacher, J
    Whelan, CM
    Vandervorst, W
    Brongersma, SH
    Beyer, GP
    Maex, K
    Vantomme, A
    Viitanen, MM
    Brongersma, HH
    Besling, WFA
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) : 7641 - 7646
  • [22] Study of electroluminescence mechanism in Au/Ge/SiO2 nanometer multi-layer films/p-Si structure
    College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
    Gongneng Cailiao, 2007, 1 (142-143+147):
  • [23] Study on thermal sensitivity of a VOx/SiO2/PS/Si multi-layer structure
    Hu, Ming
    Wu, Miao
    Lv, Yuqiang
    Dou, Yanwei
    Cui, Meng
    SURFACE & COATINGS TECHNOLOGY, 2007, 201 (9-11): : 4858 - 4860
  • [24] Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
    Al Alam, E.
    Cortes, I.
    Besland, M. -P.
    Goullet, A.
    Lajaunie, L.
    Regreny, P.
    Cordier, Y.
    Brault, J.
    Cazarre, A.
    Isoird, K.
    Sarrabayrouse, G.
    Morancho, F.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
  • [25] Structural transition layer at SiO2/Si interfaces
    Hirose, K
    Nohira, H
    Koike, T
    Sakano, K
    Hattori, T
    PHYSICAL REVIEW B, 1999, 59 (08): : 5617 - 5621
  • [26] SiO2/Ti/SiO2 Three-layer Films Used as Solar Selective Absorber Layer in Heat Energy Collector
    Lai, Fu-Der
    Li, Wei-Yang
    INTEGRATED FERROELECTRICS, 2013, 145 (01) : 158 - 164
  • [27] ZNO FILMS DEPOSITED ON GAAS SUBSTRATES WITH A SIO2 THIN BUFFER LAYER
    KIM, HK
    MATHUR, M
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (03) : 267 - 273
  • [28] Investigation of moisture-assisted fracture in SiO2 films using a channel cracking technique
    McElhaney, KW
    Ma, Q
    ACTA MATERIALIA, 2004, 52 (12) : 3621 - 3629
  • [29] X-RAY PHOTOELECTRON STUDY OF TIN/SIO2 AND TIN/SI INTERFACES
    CHOURASIA, AR
    CHOPRA, DR
    THIN SOLID FILMS, 1995, 266 (02) : 298 - 301
  • [30] CO2 Laser Additive Manufacturing of Multi-Layer Heterogeneous Transparent Films Using TiO2 and SiO2 Nanoparticles
    Bougdid, Yahya
    Kulkarni, Gunjan
    Chenard, Francois
    Sugrim, Chandraika
    Kumar, Ranganathan
    Kar, Aravinda
    LASER 3D MANUFACTURING XI, 2024, 12876
12345