Low-temperature properties of compensated Ge films used for cryogenic thermometers

被引：0

作者：

Mitin, VF ^{[1
]}

Kholevchuk, VV ^{[1
]}

Dugaev, VK ^{[1
]}

Vieira, M ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III | 2002年 / 719卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low temperature microsensors are designed for cryogenic applications. As a material for the sensors we use heavily doped compensated Ge films deposited on the semi-insulating GaAs substrates. We present the results of experimental and theoretical study of the low temperature resistance as a function of temperature and magnetic field for some models of temperature sensors. The computer simulations show a good agreement with experimental data.

引用

页码：445 / 450

页数：6

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