Low-temperature properties of compensated Ge films used for cryogenic thermometers

被引:0
|
作者
Mitin, VF [1 ]
Kholevchuk, VV [1 ]
Dugaev, VK [1 ]
Vieira, M [1 ]
机构
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low temperature microsensors are designed for cryogenic applications. As a material for the sensors we use heavily doped compensated Ge films deposited on the semi-insulating GaAs substrates. We present the results of experimental and theoretical study of the low temperature resistance as a function of temperature and magnetic field for some models of temperature sensors. The computer simulations show a good agreement with experimental data.
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页码:445 / 450
页数:6
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