Phase transformations in bulk (Ge2Se7)88Bi5Sb7

被引：0
|
作者：
Adriaenssens, Guy J. [1 ]
机构：
[1] Univ Louvain, B-3001 Louvain, Belgium
来源：
Chalcogenide Alloys for Reconfigurable Electronics | 2006年 / 918卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Annealing at 150 degrees C induces phase separation in amorphous (Ge2Se7)(88)Bi5Sb7 bulk samples. Spectrally resolved steady-state photoconductivity measurements indicate the presence of crystalline Bi2Se3 clusters in the annealed material, but also the subsequent gradual disappearance of this microstructure at room temperature. Similar annealing-induced metastable changes are observed in other elements of a (Ge2Se7)(88)BixSb12-x sample series.
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页码：93 / 98
页数：6
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