A 20-to-75 dB Gain 5-dB Noise Figure Broadband 60-GHz Receiver with Digital Calibration

被引:0
|
作者
Chai, Yuan [1 ]
Li, Lianming [1 ]
Zhao, Dixian [1 ]
Niu, Xiaokang [1 ]
He, Long [1 ]
Zheng, Fuchun [1 ]
Cui, Tiejun [1 ]
You, Xiaohu [1 ]
机构
[1] Southeast Univ, Sch Informat Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
关键词
CMOS; 60; GHz; receiver; digital calibration; LNA; down-conversion mixer; I/Q demodulator; VGA;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a broadband 60-GHz heterodyne receiver with digital calibration. In the LNA, low-coupling-coefficient transformer based matching networks are employed to improve its RF bandwidth. Digital gain control and phase tuning schemes are used for the receiver gain tuning and I/Q mismatch calibration. Measurement results show that the conversion gains of 75 dB (the high-gain mode) and 20 dB (the low-gain mode) are achieved. In the high-gain mode, the measured average noise figure is about 5 dB. Moreover, in the single-channel (i.e. 1.76 GHz RF bandwidth) and two-channel bonding (i.e. 3.52 GHz) measurements, the receiver achieves good in-band gain flatness performance. Fabricated in a 65 nm CMOS, the receiver occupies a silicon area of 1.9 mm x 0.7 mm (including all the pads) and consumes 142 mW dc power from a 1.2 V supply.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] A 92 mW, 20 dB gain, broadband lumped SiGe amplifier with bandwidth exceeding 67 GHz
    Xuan, Zhe
    Ding, Ran
    Baehr-Jones, Tom
    Hochberg, Michael
    2013 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2013, : 107 - 110
  • [42] A 7.2-mW 0.5-7.5-GHz ultra-wideband low-noise amplifier with 4 dB noise figure and 20 dB gain using 40 nm CMOS technology
    Luo, Xianhu
    Xia, Xinlin
    Cheng, Xu
    Han, Jiangan
    Cheng, Binbin
    Deng, Xianjin
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2024, 66 (06)
  • [43] A 30-40 GHz CMOS Receiver Front-End with 5.9 dB NF and 16.5 dB Conversion Gain for Broadband Spectrum Sensing Applications
    Jung, Hyunki
    Utomo, Dzuhri Radityo
    Shin, Saebyeok
    Han, Seok-Kyun
    Lee, Sang-Gug
    Kim, Junsung
    ELECTRONICS, 2019, 8 (05):
  • [44] 60-GHz SiGe-BiCMOS Power Amplifier With 14.7 dBm Output Power and 18 dB Power Gain
    Ferchichi, Ali
    Rehman, Sami Ur
    Carta, Corrado
    Ellinger, Frank
    2019 12TH GERMAN MICROWAVE CONFERENCE (GEMIC), 2019, : 229 - 231
  • [45] A 60-GHz Super-Regenerative Oscillator with 80 dB Gain in SiGe BiCMOS for FMCW Radar Active Reflecetors
    Ghaleb, Hatem
    Joram, Niko
    Ellinger, Frank
    2022 IEEE 22ND TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2022, : 31 - 34
  • [46] A 9 dB Noise Figure Fully Integrated 79 GHz Automotive Radar Receiver in 40 nm CMOS Technology
    Murakami, Tomotoshi
    Hasegawa, Nobumasa
    Utagawa, Yoshiyuki
    Arai, Tomoyuki
    Yamaura, Shinji
    2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2019, : 307 - 310
  • [47] A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology
    Kissinger, Dietmar
    Aufinger, Klaus
    Meister, Thomas F.
    Maurer, Linus
    Weigel, Robert
    2010 ASIA-PACIFIC MICROWAVE CONFERENCE, 2010, : 1501 - 1504
  • [48] Analysis and Design of 60-GHz Switched Injection-Locked Oscillator with up to 38 dB Regenerative Gain and 3.1 GHz Switching Rate
    Ferchichi, Ali
    Ghaleb, Hatem
    Carta, Corrado
    Ellinger, Frank
    2018 IEEE 61ST INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2018, : 340 - 343
  • [49] 20-GHZ 5-DB-GAIN ANALOG MULTIPLIERS WITH ALGAAS/GAAS HBTS
    OSAFUNE, K
    YAMAUCHI, Y
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (03) : 518 - 520
  • [50] A W-BAND INGAAS/INALAS/INP HEMT LOW-NOISE AMPLIFIER MMIC WITH 2.5DB NOISE FIGURE AND 19.4 DB GAIN AT 94GHZ
    Mei, X. B.
    Lin, C. H.
    Lee, L. J.
    Kim, Y. M.
    Liu, P. H.
    Lange, M.
    Cavus, A.
    To, R.
    Nishimoto, M.
    Lai, R.
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 147 - 149