Growth rate of high-quality large diamond crystals

被引:93
|
作者
Sumiya, H [1 ]
Toda, N [1 ]
Satoh, S [1 ]
机构
[1] Sumitomo Elect Ind Ltd, Itami Res Labs, Itami, Hyogo 6640016, Japan
关键词
crystal morphology; growth from high temperature solutions; single crystal growth; diamond;
D O I
10.1016/S0022-0248(01)02145-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In the diamond growth by temperature gradient method under high pressure and high temperature, the growth of a high-quality diamond crystal without metal inclusions has been investigated. Large high-quality type IIa diamond crystals without impurities of 7-8 ct (about 10 nun across) can be grown at a high growth rate of 6-7 mg/h by prolonged maintenance of a high-precision temperature control with an adequate selection of solvent metal and additives. Type Ib diamond crystals containing nitrogen impurities can be grown at higher growth rates up to 15 mg/h by using large seed crystals and adjusting the morphology with temperature control. This large seed method is not applicable for growing a type Ha diamond crystal because it is hard to control the crystal morphology of it. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1281 / 1285
页数:5
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