Contactless electromodulation spectroscopy of AlGaN/GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance

被引：40
|
作者：
Kudrawiec, R.
Syperek, M.
Motyka, M.
Misiewicz, J.
Paszkiewicz, R.
Paszkiewicz, B.
Tlaczala, M.
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 01期
关键词：
D O I：
10.1063/1.2206707
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been applied to study optical transitions in undoped and Si-doped AlGaN/GaN heterostructures at room temperature. Spectral features related to excitonic and band-to-band absorptions in GaN layer and band-to-band absorption in AlGaN layer have been resolved and analyzed. In addition, a broad spectral feature related to two-dimensional electron gas has been observed for the Si-doped heterostructure. It has been found that some of the mentioned optical transitions are not observed in CER spectra whereas they are very strong in PR spectra. This phenomenon is associated with different mechanisms of the modulation of built-in electric field in the investigated structure. A combination of PR and CER gives the possibility of a richer interpretation of both PR and CER spectra. (c) 2006 American Institute of Physics.
引用
收藏
页数：5
相关论文
共 50 条
  • [31] The theoretical study of the mobility of a two-dimensional electron gas in ALGaN/GaN/ALGaN double heterostructures
    Van Tuan T.
    Khanh N.Q.
    Van Tai V.
    Linh D.K.
    European Physical Journal B, 2021, 94 (05):
  • [32] Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures
    Polyakov, V. M.
    Schwierz, F.
    Cimalla, I.
    Kittler, M.
    Luebbers, B.
    Schober, A.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
  • [33] Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
    Kudrawiec, R.
    Paszkiewicz, B.
    Motyka, M.
    Misiewicz, J.
    Derluyn, J.
    Lorenz, A.
    Cheng, K.
    Das, J.
    Germain, M.
    Journal of Applied Physics, 2008, 104 (09):
  • [34] Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
    Buchheim, C.
    Goldhahn, R.
    Gobsch, G.
    Tonisch, K.
    Cimalla, V.
    Niebelschuetz, F.
    Ambacher, O.
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [35] Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
    Kudrawiec, R.
    Paszkiewicz, B.
    Motyka, M.
    Misiewicz, J.
    Derluyn, J.
    Lorenz, A.
    Cheng, K.
    Das, J.
    Germain, M.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
  • [36] The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
    ZHANG JinFeng
    ScienceinChina(SeriesF:InformationSciences), 2008, (06) : 780 - 789
  • [37] Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
    Martínez-Criado, G
    Cros, A
    Cantarero, A
    Ambacher, O
    Miskys, CR
    Dimitrov, R
    Stutzmann, M
    Smart, J
    Shealy, JR
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) : 4735 - 4740
  • [38] The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
    张金风
    毛维
    张进城
    郝跃
    Chinese Physics B, 2008, (07) : 2689 - 2695
  • [39] Influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures
    Gaska, R.
    Yang, J.W.
    Bykhovski, A.D.
    Shur, M.S.
    Kaminski, V.V.
    Soloviov, S.M.
    Applied Physics Letters, 1998, 72 (01):
  • [40] The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
    JinFeng Zhang
    Yue Hao
    JinCheng Zhang
    JinYu Ni
    Science in China Series F: Information Sciences, 2008, 51 : 780 - 789
12345