Noise in Nano-scale MOSFETs and Flash Cells

被引：0

作者：

Shin, Hyungcheol ^{[1
]}

Yang, Seungwon ^{[1
]}

Jeon, Jongwook ^{[1
]}

Kang, Daewoong ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Sch Elect Engn, San 56-1, Seoul 151742, South Korea

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a compact channel thermal noise model for short-channel MOSFETs which takes into account various short channel effects. Then, we compared measured data with shot-like noise level and thermal noise model in sub-40 nm CMOS devices. Also we characterized four level RTN (Random Telegraph Noise) and extracted the characteristics of two independent traps in MOSFETs and flash cells. Their vertical, lateral locations in the oxide as well as the trap energy (E-T) were obtained by using accurate equations.

引用

页码：88 / +

页数：2

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