Inconsistency of standard k.p band parameters

被引：0

作者：

Serre, Marc-Henri ^{[1
]}

Fishman, Guy ^{[1
]}

Drouhin, Henri-Jean ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, Unite Mixte Rech, UMR 8622,Ctr Rech Sci,CNRS, F-91405 Orsay, France

来源：

NANOPHOTONICS-USA | 2006年 / 6195卷

关键词：

band parameters; semiconductor; k center dot p theory;

D O I：

10.1117/12.668973

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using third and forth order perturbation, we have derived main GaAs band parameters (such as E-P) from both experimental results (m*, g*,...) and theoretical results (overall band structure from Cohen-Chelikowski pseudo-potential calculations). The analysis of the set of data leads to a drastic change to the "admitted" value of some parameters (E-P') from the only experimental results and show inconsistency if theoretical results are furthermore taken into account.

引用

页数：6

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