Current self-amplification effect of graphene-based transistor in high-field transport

被引:12
|
作者
Chen, Wei [1 ]
Qin, Shiqiao [1 ,2 ]
Zhang, Xue-Ao [1 ,2 ]
Zhang, Sen [1 ]
Fang, Jingyue [1 ]
Wang, Guang [1 ]
Wang, Chaocheng [3 ]
Wang, Li [1 ,3 ]
Chang, Shengli [1 ,2 ]
机构
[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
[3] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China
基金
中国国家自然科学基金;
关键词
701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 761 Nanotechnology - 804 Chemical Products Generally;
D O I
10.1016/j.carbon.2014.06.025
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As a one-atomic-layer carbon material with the symmetrical conduction and valence bands, graphene shows a lot of interesting effects under high electric field. Here, we report an observation of self-amplification effect of current in graphene transistors in high-field transport. The current in graphene transistors could increase with time and finally reaches up to the breakdown threshold of graphene, even under the fixed bias and zero gate voltages. The current self-amplification is accompanied by the enhancement of the graphene p-doping, which demonstrates that this effect arises from the electrons escaping from graphene due to joule heating. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1090 / 1094
页数:5
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