Optical study of cubic GaN layers grown on (001) GaAs

被引：0
|
作者：
Davydov, VY
Gurevich, AM
Goncharuk, IN
Averboukh, BY
Zinovev, NN
Cheng, TS
Foxon, CT
Orton, JW
机构：
[1] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
[2] UNIV NOTTINGHAM, DEPT ELECT & ELECT ENGN, NOTTINGHAM NG7 2RD, ENGLAND
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on photoluminescence (PL) and Raman scattering (RS) studies of GaN layers of zincblende (cubic) symmetry grown by MBE on GaAs substrates. The results enable us to understand the PL behavior in terms of a composite doping effect on the PL familiar for compensated A(3)B(5) compounds. The polarized RS data have shown the selection rules for the zincblende lattice symmetry of a high quality and deliver the one-phonon density-of-states (DOS).
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页码：869 / 872
页数：4
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