Silicon nanostructuring for 3D bulk silicon versatile devices

被引：7
|
作者：
Bopp, M. [1 ]
Coronel, P. [2 ]
Bustos, J. [3 ]
Pribat, C. [3 ]
Dainesi, P. [1 ]
Skotnicki, T. [3 ]
Ionescu, A. M. [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Nanolab, CH-1015 Lausanne, Switzerland
[2] CEA, LITEN, Grenoble, France
[3] ST Microelect, F-38926 Crolles, France
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期
关键词：
Silicon reflow; Hydrogen annealing; 3D nanostructure design; Hard mask;
D O I：
10.1016/j.mee.2008.12.083
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made on structures obtained by High Temperature Annealing (HTA) in hydrogen atmosphere process. The combination of design configuration and materials technology (hard mask) with the process shows the possibility of new 3D devices and cavities beyond previously reported capabilities of with this technique. The specific design and hard mask engineering presented can lead to structures used in a bulk silicon platform for 3D devices with optical and electronic functions for the fabrication of bulk silicon waveguides and transistors on stressed membranes with enhanced mobility. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：885 / 888
页数：4
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