Electron-electron scattering in stepped quantum wells

被引：5
|
作者：
Zerova, VL [1 ]
Vorob'ev, LE
Zegrya, GG
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 06期
关键词：
D O I：
10.1134/1.1766374
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A method for calculating the probability of intersubband electron-electron scattering in quantum wells of complex shape is suggested. Numerical data for stepped InGaAs/AlGaAs quantum wells are obtained. The principal mechanisms of electron-electron scattering that exert the strongest effect on the intersubband inversion of population in laser structures are determined. (C) 2004 MAIK "Nauka/Interperiodica".
引用
收藏
页码：689 / 695
页数：7
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