Pressure effect on electrical properties and photoluminescence spectra of solid C60 and C70 fullerenes

被引：0

作者：

Buga, SG ^{[1
]}

Blank, VD ^{[1
]}

Sundqvist, B ^{[1
]}

Dubitsky, GA ^{[1
]}

Prokhorov, VM ^{[1
]}

Serebryanaya, NR ^{[1
]}

Kazarian, SA ^{[1
]}

Oraevsky, AN ^{[1
]}

Starodubtsev, NF ^{[1
]}

机构：

[1] Technol Inst Superhard & Novel Carbon Mat, Troitsk 142190, Moscow Reg, Russia

来源：

FRONTIERS OF HIGH PRESSURE RESEARCH II: APPLICATION OF HIGH PRESSURE TO LOW-DIMENSIONAL NOVEL ELECTRONIC MATERIALS | 2001年 / 48卷

关键词：

high pressure; high temperature; fullerenes; electrical transport; photoluminescence;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrical resistivity of crystalline and disordered fullerite samples obtained by static high-pressure-high-temperature treatment of C-60 and C-70 at P = 12.5 GPa and T = 820-1500 K was investigated in the temperature range of 2.4-300 K, Room-temperature activation energy of charge carriers was found to be in the range 40-200 meV. T-3/2 and T-4 dependencies of conductivity versus temperature were revealed both in crystalline and disordered structures. Photoluminescence spectra of C-60 samples treated at P = 13 GPa. T = 770-1470 K show 50 nm short-wave length shift of characteristic 750 nm PL band.

引用

页码：483 / 491

页数：9

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