Correlation between defects and electrical conduction in surface conductive layer of CVD-diamond films

被引:0
|
作者
Show, Y
Matsuoka, F
Ri, S
Akiba, Y
Kurosu, T
Iida, M
Izumi, T
机构
来源
DEFECTS IN ELECTRONIC MATERIALS II | 1997年 / 442卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Correlation between defects and electrical conduction in surface conductive layers of CVD diamond films has been studied using electron spin resonance (ESR) and two points probe technique methods, The ESR analysis revealed the presence of P-ac-center with spin density of 10(20) spins/cm(3). The P-ac-center is composed from two ESR signals : ESR signal from carbon dangling bond with carbon atom neighbors and ESR signal from carbon dangling bond associated with nearest neighbor hole ( hole associated P-ac-center). The hole associated P-ac-center is an electrically active defect.
引用
收藏
页码:681 / 686
页数:6
相关论文
共 50 条
  • [41] Study of defects in diamond films by electrical measurements
    Pereira, L
    Pereira, E
    Gomes, H
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 793 - 798
  • [42] Influence of surface inhomogeneities of boron doped CVD-diamond electrodes on reversible charge transfer reactions
    D. Becker
    K. Jüttner
    Journal of Applied Electrochemistry, 2003, 33 : 959 - 967
  • [43] Field Emission Properties of Diamond Particles with CVD Diamond Surface Layer
    Central Research Laboratories, Matsushita Elec. Indust. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
    不详
    New Diamond Front. Carbon Technol., 2 (144-146):
  • [44] FORMATION MECHANISM OF P-TYPE SURFACE CONDUCTIVE LAYER ON DEPOSITED DIAMOND FILMS
    GI, RS
    MIZUMASA, T
    AKIBA, Y
    HIROSE, Y
    KUROSU, T
    IIDA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5550 - 5555
  • [45] Formation mechanism of p-type surface conductive layer on deposited diamond films
    Gi, Ri Sung, 1600, JJAP, Minato-ku, Japan (34):
  • [46] Field emission properties of diamond particles with CVD diamond surface layer
    Deguchi, M
    Kitabatake, M
    Kurokawa, H
    Shiratori, T
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 1999, 9 (02): : 144 - 146
  • [47] Influence of surface inhomogeneities of boron doped CVD-diamond electrodes on reversible charge transfer reactions
    Becker, D
    Jüttner, K
    JOURNAL OF APPLIED ELECTROCHEMISTRY, 2003, 33 (10) : 959 - 967
  • [48] Infrared optical properties of diamond films and electrical properties of CVD diamond detectors
    Wang, LJ
    Xia, YB
    Shen, HJ
    Zhang, ML
    Yang, Y
    Wang, L
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (20) : 2548 - 2552
  • [49] HIGHLY CONDUCTIVE LAYER IN EPITAXIAL ZNO FILMS GROWN BY CVD
    KASUGA, M
    ISHIHARA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 673 - 674
  • [50] Investigation of elastic properties of CVD-diamond films using the lowest order flexural leaky lamb wave
    Van de Rostyne, K
    Glorieux, C
    Gao, W
    Gusev, V
    Nesladek, M
    Lauriks, W
    Thoen, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 172 (01): : 105 - 111