Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency.