Progress in Zno-based diluted magnetic semiconductors

被引：33

作者：

Snure, Michael ^{[1
]}

Kumar, Dhananjay ^{[2
]}

Tiwari, Ashutosh ^{[1
]}

机构：

[1] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

[2] N Carolina A&T, Dept Mech Engn, Greensboro, NC 27411 USA

来源：

JOM | 2009年 / 61卷 / 06期

关键词：

THIN-FILMS; ELECTRONIC-STRUCTURE; FERROMAGNETISM; CO;

D O I：

10.1007/s11837-009-0092-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO-based diluted magnetic semiconductors (DMS) have attracted a great deal of research attention and controversy over the past decade. The initial attention was sparked by the prediction of above-room-temperature ferromagnetism in Mn-doped ZnO by T. Dietl. This was followed by a surge of reports of ferromagnetism in thin film transition metal (TM)-doped ZnO. However, reported values of magnetic moments and Curie temperatures were inconsistent, which led to controversy over the origin of the observed ferromagnetism. In this paper we review a number of TM-doped ZnO-based DMS in order to clarify which materials are likely ferromagnetic.

引用

页码：72 / 75

页数：4

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