Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

被引：101
|
作者：
Ando, K. [1 ]
Fujita, S. [2 ]
Ito, J. [2 ]
Yuasa, S. [1 ]
Suzuki, Y. [3 ]
Nakatani, Y. [4 ]
Miyazaki, T. [5 ]
Yoda, H. [2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Toshiba Co Ltd, Kawasaki, Kanagawa 2128582, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[4] Univ Electrocommun, Dept Commun Engn & Informat, Chofu, Tokyo 1828585, Japan
[5] Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
关键词：
MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; ATOMIC LAYERS; DEVICES;
D O I：
10.1063/1.4869828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed. (C) 2014 AIP Publishing LLC.
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页数：6
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