High Frequency Monolithic Inductor with Air-Gaps

被引：1
|
作者：
Prawoto, Clarissa [1 ]
Ma, Zichao [1 ]
Xiao, Ying [1 ]
Raju, Salahuddin [1 ]
Zhou, Changjian [1 ,2 ]
Chan, Mansun [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Kowloon, Hong Kong, Peoples R China
[2] South China Univ Technol SCUT, Guangzhou, Peoples R China
来源：
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年
基金：
中国国家自然科学基金;
关键词：
Inductor; RF; Air-gap; BEOL; h-BN; SPIRAL INDUCTORS; INTERCONNECTS; CAPACITANCE;
D O I：
10.1109/edtm47692.2020.9117825
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we evaluate the possible implementation of air-gaps for extending the operating range of an RF on-chip inductor, without affecting the inductance. To determine where air-gaps should be placed, the dominant parasitic capacitance component of an inductor is first identified, using an equivalent circuit model to extract their values from numerical simulation data. An air-gap fabrication in the back-end of line technology is given to illustrate for the feasibility of the integration. Based on the fabricated array of air-gaps at a 2:1 void-to-dielectric interval, we show that the capacitance is reduced by 40%, which translates to an increase in the inductor self-resonance frequency by 20% to 27 GHz, while having a large value inductance at 1.5 nH range.
引用
收藏
页数：4
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