Relationship between anomalous Ettingshausen effect and anomalous Nernst effect in an FePt thin film

被引：41
|
作者：
Seki, T. [1 ,2 ,3 ]
Iguchi, R. [3 ]
Takanashi, K. [1 ,2 ]
Uchida, K. [2 ,3 ,4 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Saitama 3220012, Japan
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 25期
关键词：
anomalous Ettingshausen effect; anomalous Nernst effect; FePt;
D O I：
10.1088/1361-6463/aac481
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated anomalous Ettingshausen effect (AEE) and anomalous Nernst effect (ANE) for the same device consisting of an FePt thin film. The temperature modulation due to the AEE was visualized using the active infrared emission microscopy, called lock-in thermography. On the other hand, the ANE voltage was detected under the temperature gradient induced by the heater built into the device. We experimentally evaluated the magnitudes of AEE and ANE, taking into account the heat loss to the substrate, and discussed the relationship between AEE and ANE.
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页数：6
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