In situ investigation of oxygen precipitation in Czochralski-silicon by high energy x-ray diffraction

被引：4
|
作者：
Grillenberger, Hannes [1 ]
Magerl, Andreas [1 ]
机构：
[1] Univ Erlangen Nurnberg, Lehrstuhl Kristallog & Strukturphys, D-91058 Erlangen, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 02期
关键词：
CRYSTALS;
D O I：
10.1063/1.3177330
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The change in the diffracted intensity of a silicon 400 Bragg peak is measured in situ while the sample is exposed to a thermal treatment up to 1150 degrees C. The experiments are set up in focusing Laue geometry with polychromatic and divergent x-rays generated by a high voltage tube. Changes in peak intensity and shape are only observed for Czochralski grown samples and not for the float zone grown reference group. Thus, they are attributed to oxygen related defects emerging at these temperatures. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3177330]
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页数：5
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