Architectural design tradeoffs in SRAM-based TCAMs

被引:0
|
作者
Ahmed, Ali [1 ]
Park, Kyungbae [2 ]
Khan, Saqib Ali [3 ]
Maroof, Naeem [3 ,4 ]
Baeg, Sanghyeon [5 ]
机构
[1] Usman Inst Technol, Karachi, Pakistan
[2] Samsung Elect, Seoul, South Korea
[3] KFUEIT, Comp Engn Dept, Ryk, Pakistan
[4] Univ Jeddah, Dept Elect & Elect Engn, Jeddah, Saudi Arabia
[5] Hanyang Univ, Seoul, South Korea
来源
IEICE ELECTRONICS EXPRESS | 2019年 / 16卷 / 13期
关键词
TCAM; SRAM; FPGA; emulation; memory architecture; HARDWARE; SEARCH;
D O I
10.1587/elex.16.20190267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An SRAM-based TCAM (SbT) memory architecture is proposed which exploits the tradeoffs among critical design parameters - such as throughput (T), latency (L), SRAM utilization (U), and power dissipation (P). An 18 kb TCAM is implemented on FPGA that can be adapted as latency & throughput efficient (LTE), Mid-efficient (ME), or a power & memory efficient (PME). Our implementation results show that LTE utilizes 79.3% and 96.5% more SRAM bit resources, consumes 45% and 55% more dynamic power than the ME and the PME, respectively. However, the LTE architecture shows an efficient single clock cycle latency and higher throughput than ME and PME, respectively.
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页数:3
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