Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

被引：38
|
作者：
Schowalter, LJ [1 ]
Shusterman, Y
Wang, R
Bhat, I
Arunmozhi, G
Slack, GA
机构：
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Crystal IS Inc, Latham, NY 12110 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期
关键词：
D O I：
10.1063/1.125914
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality epitaxial AlN and AlxGa1-xN layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy, double crystal x-ray diffraction, and preliminary electrical results. Ion channeling along the [11 (2) over bar 0] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al0.5Ga0.5N, indicating excellent crystal quality. A resistivity of 20 Omega cm and a mobility of 20 cm(2)/V s was measured in a Si-doped, 1-mu m-thick Al0.5Ga0.5N grown epitaxially on the AlN substrates. (C) 2000 American Institute of Physics. [S0003-6951(00)01808-8].
引用
收藏
页码：985 / 987
页数：3
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