Multifunctional Logic-in-Memory Cell Based on Wafer-Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

Large-volume data storage and high-efficiency data processing have been greatly urged by the fast development in artificial intelligence and internet of things involving novel semiconductor materials. Logic-in-memory has provided a promising route to address the processing/storage bottleneck in advanced computing systems. Herein, a logic-in-memory design based on wafer-scale MoS2 floating-gate field-effect transistor (FGFET) arrays is demonstrated. Multiple logic states and over 10 V memory window are achieved through electrical gate modulation, which further enables in-memory computing including logic functions of inverter and two-input NAND gates. Such robust and stable logic-in-memory is ascribed to the highly uniform wafer-scale MoS2 thin film prepared by atomic layer deposition (ALD)-based synthesis and the reproducible electrical performance of the device arrays. As both memory and computing units are based on floating-gate FET architecture with area efficiency, the proposed logic-in-memory cell can accomplish multifunctional tasks with fewer transistors, suggesting a potential application in high-density and complex information processing and data storage systems.