Excitons in Mott insulators -: art. no. 035111

被引:24
|
作者
Wróbel, P
Eder, R
机构
[1] Inst Low Temperatures & Struct Res, PL-50950 Wroclaw 2, Poland
[2] Univ Wurzburg, Inst Theoret Phys, D-97074 Wurzburg, Germany
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 03期
关键词
D O I
10.1103/PhysRevB.66.035111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Motivated by recent Raman and resonant inelastic x-ray scattering experiments performed for Mott insulators we present a theory of exciton formation in the upper Hubbard band. The analysis based on the spin-polaron approach is performed in the framework of an effective model. Our results confirm existence of excitons and bear resemblance to experimental data despite simplicity of our approach. They prove that the basic underlying mechanism of exciton formation is similar to that which gives rise to binding of holes in weakly doped antiferromagnets but differs from the latter in some crucial aspects.
引用
收藏
页码:351111 / 351115
页数:5
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