Controlling Asymmetric Photoresist Feature Dimensions during Plasma-Assisted Shrink

被引:0
|
作者
Fox-Lyon, Nick [1 ,2 ]
Metzler, Dominik [1 ,2 ]
Oehrlein, Gottlieb S. [1 ,2 ]
Farber, David [3 ]
Lii, Tom [3 ]
机构
[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[3] Texas Instruments Inc, Dallas, TX 75243 USA
关键词
fluorocarbon film; photoresist film; plasma deposition; FLUOROCARBON FILM DEPOSITION; TECHNOLOGY;
D O I
10.1002/ppap.201400035
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plasma-assisted shrink (PAS) of features, involving plasma deposition onto sidewalls to shrink features has been described in the past for symmetric features. In this work we explore shrinkage of asymmetric features using fluorocarbon-based plasma deposition. Using top-down and cross-section scanning electron microscopy, we find the dependencies of this shrink process on top-down blanket deposition thickness, pressure, source power, and deposition plasma chemistry with the aim of achieving the best 1:1 length to width shrink (Delta L:Delta W) of asymmetric features.
引用
收藏
页码:714 / 720
页数:7
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