FeN foils by nitrogen ion-implantation

被引:12
|
作者
Jiang, Yanfeng [1 ]
Al Mehedi, Md [2 ]
Fu, Engang [3 ]
Wang, Yongqiang [3 ]
Wang, Jian-Ping [1 ]
机构
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[3] Los Alamos Natl Lab, Ion Beam Mat Lab, Los Alamos, NM 87545 USA
关键词
SINGLE-CRYSTAL FE16N2; FILMS; PHASE; ALPHA-FE16N2; IRON; TRANSFORMATION; MAGNETIZATION; THICKNESS;
D O I
10.1063/1.4868492
中图分类号
O59 [应用物理学];
学科分类号
摘要
Iron nitride samples in foil shape (free standing, 500 nm in thickness) were prepared by a nitrogen ion-implantation method. To facilitate phase transformation, the samples were bonded on the substrate followed by a post-annealing step. By using two different substrates, single crystal Si and GaAs, structural and magnetic properties of iron nitride foil samples prepared with different nitrogen ion fluences were characterized. alpha ''-Fe16N2 phase in iron nitride foil samples was obtained and confirmed by the proposed approach. A hard magnetic property with coercivity up to 780 Oe was achieved for the FeN foil samples bonded on Si substrate. The feasibility of using nitrogen ion implantation techniques to prepare FeN foil samples up to 500 nm thickness with a stable martensitic phase under high ion fluences has been demonstrated. A possible mechanism was proposed to explain this result. This proposed method could potentially be an alternative route to prepare rare-earth-free FeN bulk magnets by stacking and pressing multiple free-standing thick alpha ''-Fe16N2 foils together. (C) 2014 AIP Publishing LLC.
引用
下载
收藏
页数:3
相关论文
共 50 条
  • [21] NITROGEN ION-IMPLANTATION INTO ZNO SINGLE-CRYSTAL
    KOBAYASHI, K
    OHNO, H
    OKADA, G
    KUMANOTANI, J
    OKAMOTO, S
    DENKI KAGAKU, 1988, 56 (03): : 204 - 205
  • [22] NITROGEN ION-IMPLANTATION INTO ZRN THIN-FILMS
    KOBAYASHI, N
    TANOUE, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 746 - 749
  • [23] ION-IMPLANTATION
    LANGOUCHE, G
    HYPERFINE INTERACTIONS, 1991, 68 (1-4): : 95 - 106
  • [24] ION-IMPLANTATION
    HERMAN, H
    MANUFACTURING ENGINEERING, 1985, 94 (05): : 11 - 11
  • [25] ION-IMPLANTATION
    PERLOFF, DS
    SOLID STATE TECHNOLOGY, 1985, 28 (02) : 127 - 127
  • [26] Effects of deformation on surface modification by nitrogen ion-implantation
    Yamamoto, A
    Tsubakino, H
    Ando, M
    Liu, L
    Terasawa, M
    Mitamura, T
    DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 341 - 344
  • [27] EFFECT OF NITROGEN ION-IMPLANTATION ON IMPACT-WEAR
    SHIH, KK
    WEAR, 1985, 105 (04) : 341 - 347
  • [28] SILICON PLANAR DEVICES USING NITROGEN ION-IMPLANTATION
    WADA, Y
    ASHIKAWA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) : 1725 - 1730
  • [29] ION-IMPLANTATION
    DROZDA, TJ
    MANUFACTURING ENGINEERING, 1985, 94 (01): : 51 - 56
  • [30] ION-IMPLANTATION
    MOREHEAD, FF
    CROWDER, BL
    SCIENTIFIC AMERICAN, 1973, 228 (04) : 65 - 71