Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

被引:23
|
作者
Ozaki, Nobuhiko [1 ,2 ,4 ]
Childs, David T. D. [1 ]
Sarma, Jayanta [1 ]
Roberts, Timothy S. [1 ]
Yasuda, Takuma [2 ]
Shibata, Hiroshi [2 ]
Ohsato, Hirotaka [3 ]
Watanabe, Eiichiro [3 ]
Ikeda, Naoki [3 ]
Sugimoto, Yoshimasa [3 ]
Hogg, Richard A. [1 ]
机构
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S3 7HQ, S Yorkshire, England
[2] Wakayama Univ, Fac Syst Engn, Wakayama 6408510, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[4] Univ Sheffield, Sheffield S3 7HQ, S Yorkshire, England
关键词
RESOLUTION; LASER;
D O I
10.1063/1.4942640
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a broadband-gain superluminescent diode (SLD) based on self-assembled InAs quantum dots (QDs) for application in a high-resolution optical coherence tomography (OCT) light source. Four InAs QD layers, with sequentially shifted emission wavelengths achieved by varying the thickness of the In0.2Ga0.8As strain-reducing capping layers, were embedded in a conventional p-n heterojunction comprising GaAs and AlGaAs layers. A ridge-type waveguide with segmented contacts was formed on the grown wafer, and an as-cleaved 4-mm-long chip (QD-SLD) was prepared. The segmented contacts were effective in applying a high injection current density to the QDs and obtaining emission from excited states of the QDs, resulting in an extension of the bandwidth of the electroluminescence spectrum. In addition, gain spectra deduced with the segmented contacts indicated a broadband smooth positive gain region spanning 160 nm. Furthermore, OCT imaging with the fabricated QD-SLD was performed, and OCT images with an axial resolution of similar to 4 mu m in air were obtained. These results demonstrate the effectiveness of the QD-SLD with segmented contacts as a high-resolution OCT light source. (C) 2016 AIP Publishing LLC.
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页数:7
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