Significant photoresponsivity enhancement of polycrystalline BaSi2 films formed on heated Si(111) substrates by sputtering

被引：22

作者：

Matsuno, Satoshi ^{[1
]}

Takabe, Ryota ^{[1
]}

Yokoyama, Seiya ^{[1
]}

Toko, Kaoru ^{[1
]}

Mesuda, Masami ^{[2
]}

Kuramochi, Hideto ^{[2
]}

Suemasu, Takashi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Tosoh Corp, Adv Mat Res Lab, Ayase, Kanagawa 2521123, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 07期

关键词：

ELECTRICAL-PROPERTIES; BARIUM DISILICIDE; THIN-FILMS; TEMPERATURE;

D O I：

10.7567/APEX.11.071401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated approximately 200-nm-thick BaSi2 films on Si(111) substrates at 600 degrees C. The formation of BaSi2 was demonstrated by X-ray diffraction and Raman spectroscopy. A reduction in the electron concentration (n = 2 x 10(16) cm(-3) ) by 3 orders of magnitude compared to that previously reported (n = 7 x 10(19) cm(-3) ) and resultant photoresponsivity enhancement by more than two orders of magnitude were achieved. The photoresponsivity increased with the bias voltage V-bias applied between the top and bottom electrodes, and reached approximately 0.19 A/W at 2.0 eV, room temperature, and |V-bias| = 0.5 V. (C) 2018 The Japan Society of Applied Physics.

引用

页数：3

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