Tunable infrared light emission from MoS2/WSe2 heterostructures

被引：0

作者：

Karni, Ouri ^{[1
]}

Barre, Elyse ^{[2
]}

Lau, Sze Cheung ^{[1
]}

Gillen, Roland ^{[3
]}

Yue, Eric ^{[1
,4
]}

Gal, Lior ^{[5
]}

Yaffe, Tzach ^{[5
]}

Kim, Bumho ^{[6
]}

Watanabe, Kenji ^{[7
]}

Taniguchi, Takashi ^{[7
]}

Orenstein, Meir ^{[5
]}

Maultzsch, Janina ^{[3
]}

Barmak, Katayun ^{[8
]}

Page, Ralph H. ^{[1
,4
]}

Heinz, Tony F. ^{[1
,4
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Friedrich Alexander Univ Erlangen Nurnberg, Dept Phys, Staudtstr 7, D-91058 Erlangen, Germany

[4] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[5] Technion, Andrew & Erna Viterbi Dept Elect Engn, IL-32000 Haifa, Israel

[6] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[7] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[8] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report light emission around 1200 nm from a vertical heterostructure consisting of MoS2 and WSe2 monolayers. The emission, arising from the fundamental interlayer exciton, can be tuned by nearly 100 nm by electrical gating. (C) 2020 The Author(s)

引用

页数：2

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