Step and flash imprint lithography using UV-transparent, electrically conductive templates

被引：0

作者：

Hooper, AE ^{[1
]}

Talin, AA ^{[1
]}

Dauksher, WJ ^{[1
]}

Baker, JH ^{[1
]}

Convey, D ^{[1
]}

Eschrich, T ^{[1
]}

Resnick, DJ ^{[1
]}

Bailey, TC ^{[1
]}

Johnson, S ^{[1
]}

Willson, CG ^{[1
]}

机构：

[1] Motorola Inc, Labs, Tempe, AZ USA

来源：

NANOTECH 2003, VOL 3 | 2003年

关键词：

step and flash imprint lithography; indium tin oxide; transparent conductive oxide;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper presents data for the preparation and characterization of very smooth, highly transparent, sputtered indium tin oxide thin films for use in Step and Flash Imprint Lithography. Comparisons of the electrical and optical properties are presented for both the amorphous and crystalline films. Crystallization of the amorphous film by annealing results in reduction of the sheet resistance from 798 to 327 Omega/square, reduction of Hall mobility from 52.6 to 26.2 cm(2).V-1 . s(-1), and an increase of free carrier density from 2.49x10(19) to 1.22 x 10(20) N-cm(-3). The films have root-mean-square roughness values of less than 2.4 Angstrom, and a maximum optical transmission of greater than 78% at 365 nm.

引用

页码：47 / 50

页数：4

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