Low resistance indium tin oxide contact to n-GaAs nanowires

被引：15
|
作者：
Zhang, J. [1 ]
Chia, A. C. E. [1 ]
LaPierre, R. R. [1 ]
机构：
[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 05期
基金：
加拿大自然科学与工程研究理事会;
关键词：
nanowires; indium tin oxide; specific contact resistance; OHMIC CONTACTS;
D O I：
10.1088/0268-1242/29/5/054002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium tin oxide (ITO) was deposited by RF sputtering on n-GaAs nanowires grown by the Au-assisted vapor-liquid-solid process in a molecular beam epitaxy (MBE) system. The ITO formed an Ohmic contact with n-doped (n = 8 x 10(18) cm(-3)) GaAs nanowires with a specific contact resistance of <1.41 Omega cm(2). Insertion of a 25 nm thick indium layer between 500 nm thick ITO and the GaAs nanowires resulted in a reduction of specific contact resistance to <0.13 Omega cm(2) after annealing at 400 degrees C for 30 s. The In/ITO film had an average transmittance of 89% from 400 to 900 nm and a sheet resistance of 13 Omega/square, which is well suited for nanowire-based optoelectronic applications.
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页数：5
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