Influence of intrinsic spin-flip processes on spin-polarized transport through quantum dots in the cotunneling regime

被引:0
|
作者
Weymann, I.
Barnas, J.
机构
[1] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland
[2] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
关键词
quantum dots; cotunneling; spin polarized transport;
D O I
10.1016/j.physb.2006.01.359
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The influence of intrinsic spin relaxation on spin-polarized cotunneling through quantum dots coupled to ferromagnetic leads is analyzed theoretically. It is shown that the zero bias anomaly, which occurs due to the interplay of single-barrier and double-barrier cotunneling processes, becomes suppressed by spin relaxation processes on the dot. Diode-like features of the transport characteristics in the cotunneling regime have been found in asymmetrical systems. These features are also suppressed by the spin relaxation processes. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:942 / 944
页数:3
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