Influence of intrinsic spin-flip processes on spin-polarized transport through quantum dots in the cotunneling regime

The influence of intrinsic spin relaxation on spin-polarized cotunneling through quantum dots coupled to ferromagnetic leads is analyzed theoretically. It is shown that the zero bias anomaly, which occurs due to the interplay of single-barrier and double-barrier cotunneling processes, becomes suppressed by spin relaxation processes on the dot. Diode-like features of the transport characteristics in the cotunneling regime have been found in asymmetrical systems. These features are also suppressed by the spin relaxation processes. (c) 2006 Elsevier B.V. All rights reserved.