Non-linear interaction of space charge waves in GaAs semiconductor

被引:0
|
作者
Grimalsky, VV [1 ]
Escobedo-Alatorre, J [1 ]
Tecpoyotl-Torres, M [1 ]
Koshevaya, SV [1 ]
机构
[1] Autonomous Univ Morelos, UAEM, CIICAp, Cuernavaca 62210, Morelos, Mexico
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E-crit; the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields Egreater than or equal toE(crit). Under these conditions, the electron velocity is a function of the electric field given by E = E-0 + (E) over tilde, where E is the constant part and (E) over tilde is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.
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页码:327 / 330
页数:4
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