Local-Gating Carbon-Nanotube Transistor with Poly-Si Bottom Gates

被引：0
|
作者：
Song, Woon [1 ]
Moon, Sunkyung [2 ]
Lee, Soon-Gul [2 ]
Kim, Jinhee
机构：
[1] Korea Res Inst Stand & Sci, Div Convergence Technol, Taejon 305600, South Korea
[2] Korea Univ, Dept Appl Phys, Chungnam 339800, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 04期
关键词：
Carbon nanotube; Carbon nanotube field-effect transistor; Local gate; FIELD-EFFECT TRANSISTORS; QUANTUM DOTS; ELECTRODES; ARRAYS; LOGIC;
D O I：
10.3938/jkps.54.1742
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A carbon nanotube field-effect transistor (CNFET) over poly-Si local gates was fabricated. The highly-doped poly-Si local gates were fabricated on top of a SiO(2) layer and an individual single-wall carbon nanotube was grown over the ploy-Si gates by using chemical vapor deposition. The transport characteristics of the CNFETs were measured at low temperatures. The gate response showed typical p-type FET characteristics with both global back and local bottom gates. The gate coupling of the local gates were comparable to or even greater than that of the global back gate. By applying appropriate gate bias voltages, we could achieve complete depletion of the carriers in the conduction channel.
引用
收藏
页码：1742 / 1745
页数：4
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