A poly-Si gate carbon nanotube field effect transistor for high frequency applications

被引：0

作者：

Kim, S ^{[1
]}

Choi, TY ^{[1
]}

Rabieirad, L ^{[1
]}

Jeon, JH ^{[1
]}

Shim, M ^{[1
]}

Mohammadi, S ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

nanotechnology; carbon nanotube; field effect transistor; poly-silicon;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3 mu m and achieves a unity gain frequency f(T) of 2.5GHz and a maximum oscillation frequency f(max) of > 5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.

引用

页码：303 / 306

页数：4

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