High Performance and Reliability Ge Channel CMOS with a MoS2 Capping Layer

被引：0
|
作者：
Li, J. [1 ]
Xie, S. [2 ,3 ]
Zheng, Z. [1 ]
Zhang, Y. [1 ]
Zhang, R. [1 ]
Xu, M. [1 ,3 ]
Zhao, Y. [1 ,3 ]
机构：
[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou, Zhejiang, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou, Zhejiang, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou, Zhejiang, Peoples R China
来源：
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年
基金：
中国国家自然科学基金;
关键词：
MONOLAYER MOS2;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High performance Ge CMOS with quantum well-structured channels has been successfully realized using a single MoS2 capping layer Thanks to a large valence band offset (0.43 eV) and conduction band offset (0.5 eV) between the two-layers-thick MoS2 and the Ge substrate, both holes and electrons within the Ge p- and n-MOSFETs are confined into Ge channels and the scattering due to the traps in gate stacks is suppressed effectively. As a result, the MoS2/Ge p- and n-MOSFETs exhibit much improved hole and electron mobilities, as well as the improved device reliability behaviors.
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页数：4
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