Influence of the ZnS precursor thickness on high efficiency CU2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

被引：0

作者：

Kim, Gee Yeong ^{[1
]}

Son, Dae-Ho ^{[2
]}

Nguyen, Trang Thi Thu ^{[1
]}

Yoon, Seokhyun ^{[1
]}

Kwon, Minsu ^{[3
]}

Jeon, Chan-Wook ^{[3
]}

Kim, Dae-Hwan ^{[2
]}

Kang, Jin-Kyu ^{[2
]}

Jo, William ^{[1
]}

机构：

[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

[2] Daegu Gyeongbuk Inst Sci & Technol, Adv Convergence Res Ctr, Daegu 711873, South Korea

[3] Yeungnam Univ, Dept Chem Engn, Gyongsan 712749, South Korea

来源：

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年

关键词：

Cu2ZnSn(S; Se)(4); Kelvin probe force microscopy; Depth profile; Secondary phase; Raman spectroscopy; and photo conversion efficiency; RAMAN-SCATTERING;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells.

引用

页数：3

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