Growth and structure of Fe, Co and Ni films on hydrogen-terminated Si(111) surfaces

被引：21

作者：

Gruyters, M ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

SURFACE SCIENCE | 2002年 / 515卷 / 01期

关键词：

scanning tunneling microscopy; growth; silicon; metallic films;

D O I：

10.1016/S0039-6028(02)01777-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) have been used to provide a detailed analysis of the growth and structure of thin 3d transition metal films on H/Si(111)1 x 1 substrates. The high homogeneity and chemical integrity of wet chemically prepared substrates has been demonstrated by STM, LEED and AES. For room temperature deposition of Co, STM measurements have revealed an island growth mode and the formation of dense granular films. It has also been evidenced by XRD that hydrogen-terminated Si(111) substrates enable film growth with single crystalline surface orientation for Fe, Co and Ni. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：53 / 60

页数：8

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