Enhanced performance of diamond Schottky nuclear batteries by using ZnO as electron transport layer

被引:12
|
作者
Liu, Benjian [1 ]
Liu, Kang [1 ]
Zhao, Jiwen [1 ]
Wang, Weihua [1 ]
Ralchenko, Victor [1 ,3 ]
Geng, Fangjuan [1 ]
Yang, Lei [1 ]
Zhang, Sen [1 ]
Xue, Jingjing [1 ]
Han, Jiecai [1 ]
Zhu, Jiaqi [1 ,2 ]
Dai, Bing [1 ]
机构
[1] Harbin Inst Technol, Natl Key Lab Sci & Technol Adv Composites Special, Harbin 150080, Peoples R China
[2] Minist Educ, Key Lab Microsyst & Microstruct Mfg, Harbin 150080, Peoples R China
[3] Russian Acad Sci, Gen Phys Inst, Vavilov Str 38, Moscow 119991, Russia
基金
中国国家自然科学基金;
关键词
CVD diamond; Schottky diode; ZnO layer; Electron transport layer; Alpha-voltaic battery; OPEN-CIRCUIT VOLTAGE; THRESHOLD ENERGY; METAL; DISPLACEMENT; DENSITY;
D O I
10.1016/j.diamond.2020.108026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Improving open-circuit voltage is critical to improving the performance of diamond nuclear battery. ZnO films have been successfully used as the electron transport layer of diamond Schottky nuclear battery in this work. The open-circuit voltage of device with ZnO layer is increased from 1.03 to 1.43 V and the conversion efficiency is increased by 100% to 1.42% compared with device without ZnO layer. By comparing the device structure diagram and potential distribution before and after adding the ZnO layer, we try to find out the cause of the increase in open-circuit voltage. This research provides a new way to improve the open-circuit voltage and conversion efficiency of nuclear batteries.
引用
收藏
页数:8
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