Passivation of crystalline silicon using silicon nitride

被引：0

作者：

Cuevas, A ^{[1
]}

Kerr, MJ ^{[1
]}

Schmidt, J ^{[1
]}

机构：

[1] Australian Natl Univ, Fac Engn, Canberra, ACT, Australia

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD) silicon nitride (SiN) to passivate tire surface of crystalline silicon wafers and, in the case of multicrystalline silicon, improve the bulk material by hydrogenation has attracted a great deal of research and development. This review summarizes the state of the art of surface passivation by PECVD SiN, together with the present understanding of the physical mechanisms that underlie it. The impact of SiN on ultimate solar cell performance is discussed and an optimization of SiN passivated n(+) emitters is presented. Finally, the experimental evidence of SiN-induced hydrogenation of mc-Si is discussed and areas for further work are suggested.

引用

页码：913 / 918

页数：6

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