Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers

被引：1

作者：

Sheikholeslami, Alireza ^{[1
]}

Parhami, Farnaz ^{[2
]}

Puchner, Helmut ^{[2
]}

Selberherr, Siegfried ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, Gusshausstr 27-29-E360, A-1040 Vienna, Austria

[2] Cypress Semicond Corp, San Jose, CA 95134 USA

来源：

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2007年 / 61卷

关键词：

D O I：

10.1088/1742-6596/61/1/208

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Final passivation planarization is achieved by optimizing the stack height and trench width for technologies that are sensitive to passivation planarization like image sensor processes. Deposition profiles obtained by using our topography simulator elsa (Enhanced Level Set Applications) predict a range of trench width, stack height, and the thickness of the deposited layers which lead to a sufficient planarization margin. Furthermore, these predictions enable design of trenches with a sufficient side wall and bottom coverage in order to guarantee a proper moisture seal.

引用

页码：1051 / 1055

页数：5

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